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High Voltage Silicon Carbide Device onsemi UJ3C120150K3S with Ultra Low Gate Charge and On Resistance

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High Voltage Silicon Carbide Device onsemi UJ3C120150K3S with Ultra Low Gate Charge and On Resistance

Description : TO-247-3 JFETs RoHS

Mfr. Part # : UJ3C120150K3S

Model Number : UJ3C120150K3S

Package : TO-247-3

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Product Description

This Silicon Carbide (SiC) Cascode JFET is an EliteSiC Power N-Channel device designed for high-performance switching applications. It utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si super-junction devices. The UJ3C120150K3S, available in a TO247-3 package, boasts ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and applications requiring standard gate drive. Its key advantages include ultra-low on-resistance, high operating temperature capability, and excellent reverse recovery. Typical applications include EV Charging, PV Inverters, Switch Mode Power Supplies, Power Factor Correction Modules, Motor Drives, and Induction Heating.

Product Attributes

Brand: onsemi
Material: Silicon Carbide (SiC)
Certifications: Pb-Free, Halogen Free, RoHS Compliant

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS
Drain-source Voltage	VDS				1200	V
Gate-source Voltage	VGS	DC	-25		+25	V
Continuous Drain Current (Note 1)	ID	TC = 25 C			18.4	A
Continuous Drain Current (Note 1)	ID	TC = 100 C			13.8	A
Pulsed Drain Current (Note 2)	IDM	TC = 25 C			38	A
Single Pulsed Avalanche Energy (Note 3)	EAS	L = 15 mH, IAS = 2 A			30	mJ
Power Dissipation	Ptot	TC = 25 C			166.7	W
Maximum Junction Temperature	TJ,max				175	C
Operating and Storage Temperature	TJ, TSTG		-55		175	C
Max. Lead Temperature for Soldering, 1/8 from Case for 5 Seconds	TL				250	C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case	R JC			0.7	0.9	C/W
ELECTRICAL CHARACTERISTICS (TJ = +25 C unless otherwise specified) - STATIC
Drain-source Breakdown Voltage	BVDS	VGS = 0 V, ID = 1 mA	1200			V
Total Drain Leakage Current	IDSS	VDS = 1200 V, VGS = 0 V, TJ = 25 C		2	50	A
Total Drain Leakage Current	IDSS	VDS = 1200 V, VGS = 0 V, TJ = 175C		17		A
Total Gate Leakage Current	IGSS	VDS = 0 V, TJ = 25 C, VGS = 20 V/ +20 V		4	20	A
Drain-source On-resistance	RDS(on)	VGS = 12 V, ID = 5 A, TJ = 25 C		150	180	m
Drain-source On-resistance	RDS(on)	VGS = 12 V, ID = 5 A, TJ = 125 C		250		m
Drain-source On-resistance	RDS(on)	VGS = 12 V, ID = 5 A, TJ = 175 C		330		m
Gate Threshold Voltage	VG(th)	VDS = 5 V, ID = 10 mA	3.5	4.4	5.5	V
Gate Resistance	RG	f = 1 MHz, open drain		4.6
ELECTRICAL CHARACTERISTICS (TJ = +25 C unless otherwise specified) - REVERSE DIODE
Diode Continuous Forward Current (Note 4)	IS	TC = 25 C			18.4	A
Diode Pulse Current (Note 5)	IS,pulse	TC = 25 C			38	A
Forward Voltage	VFSD	VGS = 0 V, IS = 5 A, TJ = 25 C		1.46	2	V
Forward Voltage	VFSD	VGS = 0 V, IS = 5 A, TJ = 175 C		2		V
Reverse Recovery Charge	Qrr	VDS = 800 V, IS = 13 A, VGS = 0 V, RG_EXT = 20 , di/dt = 1700 A/ s, TJ = 150 C		63		nC
Reverse Recovery Time	trr			28		ns
ELECTRICAL CHARACTERISTICS (TJ = +25 C unless otherwise specified) - DYNAMIC
Input Capacitance	Ciss	VDS = 100 V, VGS = 0 V, f = 100 kHz		738		pF
Output Capacitance	Coss			58		pF
Reverse Transfer Capacitance	Crss			1.8		pF
Effective Output Capacitance, Energy Related	Coss(er)	VDS = 0 V to 800 V, VGS = 0 V		34		pF
Effective Output Capacitance, Time Related	Coss(tr)			68		pF
Coss Stored Energy	Eoss	VDS = 800 V, VGS = 0 V		10.8		J
Total Gate Charge	QG	VDS = 800 V, ID = 13 A, VGS = 5 V to 15 V		30		nC
Gate-drain Charge	QGD			6
Gate-source Charge	QGS			10
Turn-on Delay Time	td(on)	VDS = 800 V, ID = 13 A, Gate Driver = 5 V to +15 V, Turn-on RG_EXT = 1 , Turn-off RG_EXT = 20 , Inductive Load, FWD: UJ3D1205TS, TJ = 150 C		21		ns
Rise Time	tr			10		ns
Turn-off Delay Time	td(off)			36		ns
Fall Time	tf			7		ns
Turn-on Energy	EON			175		J
Turn-off Energy	EOFF			46		J
Total Switching Energy	ETOTAL			221		J

2506231743_onsemi-UJ3C120150K3S_C45343199.pdf

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